Phase modulation device, phase modulation device fabrication method, crystallization apparatus, and crystallization method

ABSTRACT

A phase shifter which modulates the phase of incident light has a light-transmitting substrate such as a glass substrate, and a phase modulator such as a concavity and convexity pattern which is formed on the laser beam incident surface of the light-transmitting substrate and modules the phase of incident light. A light-shielding portion which shields light in the peripheral portion where the optical intensity distribution decreases of the phase modulator is formed on the laser beam incident surface or exit surface of the phase shifter, thereby shielding the peripheral light in the irradiation surface of the incident laser beam.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional application of and claims the benefitof priority under 35 U.S.C. §120 from U.S. application Ser. No.11/523,567, filed Sep. 20, 2006, which is based upon and claims thebenefit of priority under 35 U.S.C. §119 from prior Japanese PatentApplication No. 2005-275867, filed Sep. 22, 2005, the entire contents ofeach of which is incorporated herein by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a phase modulation device, phasemodulation device fabrication method, crystallization apparatus, andcrystallization method by which annealing such as uniformcrystallization can be performed.

2. Description of the Related Art

The thin-film semiconductor technique is an important technique forforming semiconductor devices such as a thin-film transistor (TFT),contact type sensor, and photoelectric conversion element on aninsulating substrate. The thin-film transistor is a field-effecttransistor having a MOS (MIS) structure, and is also applied to a flatpanel display such as a liquid crystal display (e.g., “Surface Science”,Vol. 21, No. 5, pp. 278-287).

The liquid crystal display generally has the characteristics asflatness, lightweight, and low power consumption, and can easily displaycolor images. The liquid crystal display having these characteristics iswidely used as displays of personal computers and various portableinformation terminals. When the liquid crystal display is an activematrix type display, thin-film transistors are used as pixel switchingelements.

An active layer (carrier moving layer) of this thin-film transistor ismade of, e.g., a thin silicon semiconductor film. The thin siliconsemiconductor film is classified into amorphous silicon (a-Si) andpolycrystalline silicon (non-single-crystal crystalline silicon) havingfine crystal phases. The polycrystalline silicon is mainly polysilicon(poly-Si). Microcrystal silicon (μc-Si) is also known as thepolycrystalline silicon. Examples of semiconductor thin-film materialsother than silicon are SiGe, SiO, CdSe, Te, and CdS.

The carrier mobility in the active layer when a thin-film transistor isformed in polycrystalline silicon is about 10 times to 100 times aslarge as that when a thin-film transistor is formed in amorphoussilicon. This carrier mobility characteristic is a superiorcharacteristic as a semiconductor thin-film material for forming aTFT-structure switching element in a thin polycrystalline silicon film.Recently, a thin-film transistor using polysilicon as an active layer isnoted for its high operating speed. This thin-film transistor having ahigh operating speed is noted as a switching element capable of formingvarious logic circuits such as a domino circuit and CMOS transmissiongate. These logic circuits are necessary to form driving circuits of aliquid crystal display and electroluminescence display, a multiplexer,an EPROM, an EEPROM, a CCD, a RAM, and the like.

The conventional representative process of forming a thin semiconductorfilm made of polycrystalline silicon will be explained below. Asubstrate to be processed by this process has the following structure.An insulating substrate of glass or the like is prepared first. Anundercoat layer (or buffer layer) such as a silicon oxide film (SiO₂) isformed on this insulating substrate. In addition, an amorphous siliconfilm (a-Si) about 50 nm thick is formed as a thin semiconductor film onthe undercoat layer. After that, dehydrogenation is performed todecrease the hydrogen concentration in the amorphous silicon film.Subsequently, a cap film such as a silicon oxide film (SiO₂) is formedon the amorphous silicon film, thereby forming the substrate to beprocessed. Then, melt recrystallization of the amorphous silicon film isperformed by excimer laser crystallization or the like. Morespecifically, an excimer laser beam irradiates the amorphous siliconfilm to change the amorphous silicon film in this irradiated region intoa crystalline silicon film.

Presently, the thin polycrystalline silicon semiconductor film thusfabricated is used as an active layer (channel region) of an n- orp-channel thin-film transistor. In this case, the field-effect mobility(the electron or hole mobility obtained by the field effect) of thethin-film transistor is about 100 to 150 cm²/V·sec for the n-channel,and 100 cm²/V·sec for the p-channel. The use of this thin-filmtransistor makes it possible to form driving circuits such as a signalline driving circuit and scan line driving circuit on a substrate onwhich pixel switching elements are formed. Accordingly, adriving-circuit-integrated display device can be obtained. As aconsequence, the manufacturing cost of the display device can bereduced.

The electrical characteristics of the thin-film transistor formed on theinsulating substrate are not so excellent as to integrate signalprocessing circuits, such as a D/A converter which converts digitalvideo data into an analog video signal and a gate array which processesthe digital video data, on the substrate of the display device. In thiscase, the thin-film transistor is required to have current drivingcapability two times to five times as high as the present capability.This thin-film transistor is also required to have a field-effectmobility of about 300 cm²/V·sec or more. To improve the functions andadded values of the display device, the electrical characteristics ofthe thin-film transistor must be further improved. For example, when astatic memory formed by a thin-film transistor is to be added to eachpixel in order to give the pixel a memory function, this thin-filmtransistor is required to have electrical characteristics equivalent tothose obtained when a single-crystal semiconductor is used. Therefore,it is important to improve the characteristics of the thin semiconductorfilm.

As a method of improving the characteristics of the thin semiconductorfilm, it is possible to make the crystallinity of the thin semiconductorfilm approach that of a single crystal. In effect, if the thinsemiconductor film can be entirely changed into a single crystal on theinsulating substrate, it is possible to obtain characteristics similarto those of a device using a SOI substrate which is examined as thenext-generation LSI. This attempt was made more than 10 years ago as athree-dimensional device research project. Unfortunately, no techniquecapable of entirely changing the thin semiconductor film into a singlecrystal has been established yet. However, it is presently stillexpected that semiconductor grains in the thin semiconductor film be asingle crystal.

Conventionally, a technique which grows large single-crystalsemiconductor grains during crystallization of a thin amorphoussemiconductor film is proposed (e.g., “Surface Science”, Vol. 21, No. 5,pp. 278-287). “Surface Science”, Vol. 21, No. 5, pp. 278-287 wasannounced as results of the research extensively continued by Matsumuraet al. This reference discloses a technique which irradiates a thinamorphous semiconductor film with an excimer laser whose intensity isspatially modulated by using a phase shifter which modulates the phaseof incident light. This reference also discloses a phase modulationexcimer laser crystallization method which changes that region of thethin amorphous semiconductor film, which is irradiated with the laserinto a thin polysilicon film by melt recrystallization. An ordinarylaser crystallization method uses a laser beam having excimer laserintensity which is averaged (homogenized) on the plane of a thin siliconfilm by using an optical system (homogenizing optical system) called abeam homogenizer (e.g., “Flat Panel Display 96”, pp. 174-176). Bycontrast, the excimer laser intensity of the laser beam in the phasemodulation excimer laser crystallization method disclosed in “SurfaceScience”, Vol. 21, No. 5, pp. 278-287 is varied on the plane of a thinsilicon film by using the phase shifter, thereby producing a temperaturegradient corresponding to this optical intensity distribution in thethin silicon film. This temperature gradient promotes the growth ofsingle-crystal silicon grains from a low-temperature portion to ahigh-temperature portion in a lateral direction parallel to the plane ofthe thin silicon film. Consequently, this phase modulation excimer lasercrystallization method can grow large-size, single-crystal silicongrains in the crystallized region, compared to the laser crystallizationmethod disclosed in “Flat Panel Display 96”, pp. 174-176. This phasemodulation excimer laser crystallization method can grow, in anamorphous silicon film, single-crystal silicon grains having a grainsize of about a few μm by which one or a plurality of active elementssuch as thin-film transistors can be fabricated (accommodated).Accordingly, a thin-film transistor having electrical characteristicsmeeting the above-mentioned requirements can be obtained by forming thetransistor in the single-crystal silicon grains thus grown.

The phase modulation excimer laser crystallization method disclosed in“Surface Science”, Vol. 21, No. 5, pp. 278-287 is an effective techniquecapable of forming large-size, single-crystal silicon grains inpredetermined positions. The present inventors are extensively makingresearch and development for applying this technique to industrial uses.

In the in-plane optical intensity distribution of a laser beam emittedfrom a laser source, the optical intensity is a maximum near the opticalaxis and decreases toward the periphery. Therefore, a crystallizationapparatus generally has an optical system (homogenizing optical system)which homogenizes the optical intensity distribution of a laser beam ina two-dimensional plane.

Unfortunately, even when the excimer laser intensity is averaged byusing the homogenizing optical system, the light irradiation intensitystill decreases in the peripheral portion of the irradiation region. Ifcrystallization is performed using this beam irradiation region, theirradiation intensity difference produces a difference between the sizesof crystal grains in the central portion and peripheral portion.

Furthermore, in the peripheral irradiation region in which the lightirradiation intensity decreases, the silicon film does not reach themelting temperature and an annular non-crystallized region remains in aregion where the irradiation intensity is too low.

When irradiation is performed a plurality of number of times in anirradiation region like this, even if low-light-irradiation-intensityportions between the adjacent irradiation regions are overlapped, nocrystallization is well performed in the overlapped irradiation region.Accordingly, if a channel region of a thin-film transistor is formed inthis region, the characteristics of the thin-film transistor worsen.When the substrate is to be entirely crystallized, therefore, it isrequired to densely irradiate the adjacent irradiation regions formed byrepetitive irradiation.

BRIEF SUMMARY OF THE INVENTION

The present invention has been made in consideration of the aboveproblems, and has as its object to provide a phase shifter capable ofenhancing uniformity of crystal grain sizes in an irradiation region, amethod of fabricating the phase shifter, and a laser annealingapparatus.

The present invention has the following arrangements in order to achievethe above object.

A phase modulation device according to an aspect of the presentinvention is a phase modulation device including a light-transmittingsubstrate, and a concavity and convexity pattern which is formed on thelight-transmitting substrate and modulates a phase of incident light,comprising a light-shielding member which is formed on at least one ofan incident surface and an exit surface of the light-transmittingsubstrate, and shields the incident light which enters a predeterminedperipheral portion of the concavity and convexity pattern and aperipheral portion of the light-transmitting substrate.

The light-shielding member is preferably at least one of a reflector, anabsorber, a scatterer, and a thin film. The light-shielding member ispreferably at least one of aluminum, an aluminum alloy, and chromium.The aluminum alloy is preferably an Al—Si alloy.

The film thickness of the thin film is preferably 30 to 2,000 nm. Whenthe light-shielding member is aluminum, the film thickness of the thinfilm is preferably 50 to 2,000 nm. When the light-shielding member is anAl—Si film, the film thickness of the thin film is preferably 80 to2,000 nm.

According to another aspect of the present invention, a method offabricating a phase modulation device including a light-transmittingsubstrate and a modulator which modulates a phase of incident light onthe light-transmitting substrate, comprises forming, on thelight-transmitting substrate, light-shielding means for shieldingperipheral light in an irradiation surface of the incident light to thelight-transmitting substrate.

According to still another aspect of the present invention, a method offabricating a phase modulation device including a light-transmittingsubstrate and a concavity and convexity pattern which modulates a phaseof incident light on the light-transmitting substrate, comprisesforming, on an incident surface or an exit surface of thelight-transmitting substrate, a light-shielding member which shields theincident light to a predetermined peripheral portion of the concavityand convexity pattern and an outer peripheral portion of thelight-transmitting substrate.

A through hole portion is preferably formed in a central portion of thelight-shielding member by wet etching. The light-shielding member ispreferably an annular light-shielding member.

A crystallization apparatus according to still another aspect of thepresent invention is a crystallization apparatus in which a laser beamfrom a laser source irradiates a substrate to be processed on asuscepter via a homogenizing optical system, a phase modulation device,and an image formation optical lens system, thereby crystallizing anirradiated surface, comprising light-shielding means which is formed inan optical path from an exit surface of the homogenizing optical systemto an incident surface of the image formation optical lens system, andshields peripheral light of exit light from the homogenizing opticalsystem.

A crystallization apparatus according to still another aspect of thepresent invention is a crystallization apparatus in which a laser beamfrom a laser source irradiates a substrate to be processed on asuscepter via a homogenizing optical system, a phase modulation device,and an image formation optical lens system, thereby crystallizing anirradiated surface, the phase modulation device comprising a phasemodulator formed on the light-transmitting substrate, andlight-shielding means which is formed in an optical path from an exitsurface of the homogenizing optical system to an incident surface of theimage formation optical lens system, and shields peripheral light in anirradiation surface of the incident light to the phase modulationdevice.

A crystallization apparatus according to still another aspect of thepresent invention is a crystallization apparatus in which a laser beamfrom a laser source irradiates a substrate to be processed on asuscepter via a homogenizing optical system, a phase modulation device,and an image formation optical lens system, thereby crystallizing anirradiated surface, comprising light-shielding means which is formed inan optical path between an exit surface of the homogenizing opticalsystem and the image formation optical lens system, and shieldsperipheral light whose optical intensity is low on the exit surface ofthe homogenizing optical system.

A crystallization method according to still another aspect of thepresent invention is a crystallization method in which a laser beam froma laser source irradiates a substrate to be processed on a suscepter viaa homogenizing optical system, a phase modulation device, and an imageformation optical lens system, thereby crystallizing an irradiatedsurface, comprising a step of forming a laser beam by shieldinglow-optical-intensity peripheral light of the laser beam on an exitsurface of the homogenizing optical system, in an optical path betweenthe exit surface of the homogenizing optical system and an incidentsurface of the image formation optical lens system.

The length of an opening of the light-shielding member in a periodicdirection for the concavity and convexity pattern is preferably integraltimes of the length of the one concavity and convexity pattern necessaryfor forming one cycle of a triangle wave formed by the concavity andconvexity pattern.

An optical intensity distribution of incident light shielded by thelight-shielding member and phase-modulated by the concavity andconvexity pattern is preferably a triangle wave configured such that theintensity in the end portion of the incident light becomes the minimum.

The concavity and convexity pattern preferably gives a periodicalspatial distribution to the optical intensity of the incident light.

The present invention can make the crystal grain sizes in an irradiationregion uniform. In addition, an irradiation region can be accuratelydefined. When irradiation is to be performed a plurality of number oftimes, therefore, irradiation regions can be formed as they are denselyarranged.

Additional objects and advantages of the invention will be set forth inthe description which follows, and in part will be obvious from thedescription, or may be learned by practice of the invention. The objectsand advantages of the invention may be realized and obtained by means ofthe instrumentalities and combinations particularly pointed outhereinafter.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWING

The accompanying drawings, which are incorporated in and constitute apart of the specification, illustrate embodiments of the invention, andtogether with the generation description given above and the detaileddescription of the embodiments given below, serve to explain theprinciples of the invention.

FIG. 1A is a view for explaining an embodiment of a phase shifteraccording to the present invention;

FIG. 1B is a view for explaining the embodiment of the phase shifteraccording to the present invention;

FIG. 1C is a view for explaining the embodiment of the phase shifteraccording to the present invention;

FIG. 1D is a view for explaining the embodiment of the phase shifteraccording to the present invention;

FIG. 2A is a view for explaining another embodiment of the phase shifteraccording to the present invention;

FIG. 2B is a view for explaining the other embodiment of the phaseshifter according to the present invention;

FIG. 2C is a view for explaining the other embodiment of the phaseshifter according to the present invention;

FIG. 2D is a view for explaining the other embodiment of the phaseshifter according to the present invention;

FIG. 3A is a graph for explaining the characteristics of the phaseshifters shown in FIGS. 1A to 1D or 2A to 2D;

FIG. 3B is a graph for explaining the characteristics of the phaseshifters shown in FIGS. 1A to 1D or 2A to 2D;

FIG. 4 is a flowchart for explaining a method of fabricating the phaseshifter shown in FIGS. 1A to 1D in order of steps;

FIG. 5A is a view for explaining the method of fabricating the phaseshifter shown in FIGS. 1A to 1D in order of steps;

FIG. 5B is a view for explaining the method of fabricating the phaseshifter shown in FIGS. 1A to 1D in order of steps;

FIG. 5C is a view for explaining the method of fabricating the phaseshifter shown in FIGS. 1A to 1D in order of steps;

FIG. 5D is a view for explaining the method of fabricating the phaseshifter shown in FIGS. 1A to 1D in order of steps;

FIG. 6A is a sectional view for explaining the method of fabricating thephase shifter shown in FIGS. 1A to 1D in order of steps;

FIG. 6B is a sectional view for explaining the method of fabricating thephase shifter shown in FIGS. 1A to 1D in order of steps;

FIG. 6C is a sectional view for explaining the method of fabricating thephase shifter shown in FIGS. 1A to 1D in order of steps;

FIG. 6D is a sectional view for explaining the method of fabricating thephase shifter shown in FIGS. 1A to 1D in order of steps;

FIG. 6E is a sectional view for explaining the method of fabricating thephase shifter shown in FIGS. 1A to 1D in order of steps;

FIG. 6F is a sectional view for explaining the method of fabricating thephase shifter shown in FIGS. 1A to 1D in order of steps;

FIG. 7 is a sectional view for explaining an embodiment of acrystallization apparatus of the present invention;

FIG. 8A is a view for explaining the arrangement of an illuminatingsystem shown in FIG. 7;

FIG. 8B is a view for explaining the arrangement of the illuminatingsystem shown in FIG. 7;

FIG. 9A is a view for explaining another embodiment of FIGS. 1A to 1Dand 2A to 2D;

FIG. 9B is a view for explaining another embodiment of FIGS. 1A to 1Dand 2A to 2D;

FIG. 9C is a view for explaining another embodiment of FIGS. 1A to 1Dand 2A to 2D;

FIG. 9D is a view for explaining another embodiment of FIGS. 1A to 1Dand 2A to 2D;

FIG. 10A is a view for explaining another embodiment of FIGS. 1A to 1D,2A to 2D, and 9A to 9D;

FIG. 10B is a view for explaining another embodiment of FIGS. 1A to 1D,2A to 2D, and 9A to 9D;

FIG. 10C is a view for explaining another embodiment of FIGS. 1A to 1D,2A to 2D, and 9A to 9D;

FIG. 10D is a view for explaining another embodiment of FIGS. 1A to 1D,2A to 2D, and 9A to 9D;

FIG. 11A is a view showing the optical intensity distribution per oneshot when the optical intensity distribution is the inverse peak patternand a schematic view indicating the crystallization growth by SEM in theportion corresponding to the optical intensity distribution; and

FIG. 11B is a view showing the optical intensity distribution per oneshot when the optical intensity distribution is the normal peak patternand a schematic view of the crystallization growth by SEM in the portioncorresponding to the optical intensity distribution.

DETAILED DESCRIPTION OF THE INVENTION

An embodiment of a phase modulation device, e.g., a phase shifter of thepresent invention will be explained below with reference to FIGS. 1A to1D and 2A to 2D. A phase shifter 1 has a light-transmitting substrate 2,e.g., a synthetic quartz substrate having transparency to incidentlight, a phase modulator 3 which is formed on the light-transmittingsubstrate 2 and modulates the phase of the incident light bydiffracting, refracting and interfering the incident light, and alight-shielding member, e.g., a light-shielding portion 4 which shieldsperipheral light in a predetermined irradiation surface of the phasemodulator 3. The incident light is a laser beam, e.g., a pulse laserbeam.

The phase modulator 3 is a region so processed as to modulate the phaseof incident light by diffracting, refracting and interfering theincident light, and is a concavity and convexity pattern or the like.The concavity and convexity pattern is, e.g., a line and space patternor a duty modulation pattern. The phase modulator 3 is obtained byforming steps on one surface of the light-transmitting substrate 2,e.g., a synthetic quartz substrate. Diffraction, refraction andinterference of an incident laser beam 10 occur in the concavity 5 andconvexity 6. As a consequence, a spatial distribution, i.e, a periodicalspatial distribution is given to the intensity of the incident laserbeam. The steps of the concavity and convexity pattern are designed asfollows. When the wavelength of the incident laser beam 10 is given as λand the refractive index of the substrate 2 is given as n, the steps tof the concavity and convexity is calculated by t=λθ/2π(n−1) in order togive a phase difference of θ.

When the phase difference of, e.g., 180° is to be given, it iscalculated by t=λ/2(n−1). The concavity and convexity pattern can beformed by, e.g., etching the substrate 2.

The light-shielding member is formed on at least one of the incidentsurface and exit surface of the light-transmitting substrate. Forexample, the light-shielding portion 4 is formed on the incident surfaceof the substrate 2. The light-shielding member is a member whichsuppresses the transmitting light amount of incident light by at leastone of reflection, absorption, and scattering, and need only be, e.g., areflector, absorber, or scattering member. An embodiment of thelight-shielding member may also be a thin film. The thin film is, e.g.,a metal film. This metal film is at least one of, e.g., an aluminumfilm, aluminum alloy film, and chromium film.

The optimum film thickness of a chromium film is 30 to 2,000 nm, that ofan aluminum film is 50 to 2,000 nm, and that of an aluminum alloy film,e.g., an Al—Si film is 80 to 2,000 nm. The light-shielding portion 4 isformed on one surface of the light-transmitting substrate 2, e.g., onthe surface with the concavity and convexity pattern.

The relationship between the phase shifter 1 having the abovearrangement and the incident laser beam 10 will be explained below. Anexample of the incident laser beam 10 to the phase shifter 1 is a laserbeam homogenized by a homogenizing optical system. FIG. 1A is aschematic view showing an optical intensity distribution 13 of theincident laser beam 10 homogenized by a homogenizing optical system. Inaddition, the optical intensity at each position is indicated by thelength of a vertical line 14. FIG. 1A shows that the incident laser beam10 is composed of a laser beam 15 having the uniform optical intensityand its peripheral light 11. The peripheral light 11 is a region wherethe optical intensity of the incident laser beam 10 is not uniform. FIG.1A demonstrates that the optical intensity is not completely homogenizedin the section of the incident laser beam 10 even when a homogenizingoptical system is used. In this specification, the peripheral light 11is a region where the optical intensity has practically lowered in theirradiation surface of the laser beam 10. FIG. 1A shows an example inwhich the light-shielding portion 4 shields the peripheral light 11.Although a light-shielding region of the light-shielding portion 4 is aregion where the optical intensity practically lowers, this region alsoincludes a portion exceeding a threshold 12′ where crystallization isenabled, thus actually including a region which can be crystallized.

Referring to FIG. 1A, the positional relationship among the opticalintensity distribution 13 of the incident laser beam 10, the sidesectional view of the phase shifter 1, and the optical intensitydistribution 21 of an irradiation laser beam 20 is indicated by thedotted lines. “Irradiation laser beam 20” means a laser beam forirradiating a substrate to be processed whose surrounding islight-shielded by the light-shielding member and whose phase ismodulated by the phase shifter. FIG. 1B shows a plan view in which thephase shifter 1 is viewed from above. Referring to FIG. 1B, theirradiation region 12 which is not covered with the light-shieldingportion 4 is shown and this means the region to be irradiated with theirradiation laser beam. The opening of the light-shielding portion 4 ispreferably formed in a square or a polygon, as described later, in orderto form densely crystals on the whole substrate through the repetitiveirradiation. This square is, e.g., a regular square.

The repetitive irradiation is to execute a crystallization step bysequentially moving the substrate to be crystallized thereby changing anirradiation position on the substrate to be crystallized, whencrystallizing the whole substrate larger than the irradiation region 12.In this irradiation method, the laser beam 10 sequentially striking thesubstrate to be crystallized can be emitted such that the peripheralportion of the irradiation region 12 of the preceding laser beam isirradiated with the succeeding laser beam 10 in an adjacent way. Inother irradiation methods, the same position may be irradiated with thepreceding and succeeding laser beam 10 a plurality of number of times,or irradiation positions may also partially overlap each other.

The light-shielding substrate 2 of the phase shifter 1 is formed by,e.g., a synthetic quartz substrate. On one surface, e.g., the incidentsurface of this synthetic quartz substrate, the phase modulator 3 havinga concavity and convexity pattern which changes the phase of theincident laser beam 10 is formed.

The optical intensity distribution corresponding to the irradiationregion 12 where the incident laser beam 10 is uniform has a good opticalintensity distribution having a continuous triangular section by a phaseshift effect.

For example, the optical intensity distribution 21 formed by the phaseshifter 1 has an optical intensity distribution of an inverse peakpattern as shown in FIG. 1A. The inverse peak pattern means a trianglewave constituted such that the intensity becomes the maximum in the endportion of the optical intensity distribution 21. The light-shieldingportion 4 can remove an optical intensity distribution region as aperipheral nonuniform portion corresponding to the peripheral light 11.If no light-shielding portion 4 is formed, a non-single-crystalsemiconductor film is formed by irradiation with the laser beam 10 fromthe peripheral light 11. This non-single-crystal semiconductor film hasa grain size and orientation entirely different from those of crystalgrains of a single-crystal semiconductor film 22 crystallized in theirradiation region 12 as a uniform portion. When a transistor is formed,therefore, the electrical characteristics of the transistor worsen.

The single-crystal semiconductor film 22 does not mean a film which iscompletely changed into a single crystal all over the surfaces, butmeans a semiconductor film in which the grain sizes of crystal grainsformed by crystallization are large and the orientation is uniform tosome extent, and which has electrical characteristics better than thoseof a TFT formed in the non-single-crystal semiconductor film.

The phase modulation device, e.g., the phase shifter 1 of thisembodiment will be explained in detail below. The phase shifter 1 is anexample in which a light-shielding member, e.g., the light-shieldingportion 4 which shields light in the peripheral portion as shown in FIG.1A is formed on the surface of a synthetic quartz substrate on which thephase modulator 3, e.g., a concavity and convexity pattern 5, 6 isformed. The light-shielding portion 4 has a square through hole whichtransmits light in the irradiation region 12 where the optical intensitydistribution is uniform as shown in FIG. 1B. The incident laser beam 10enters the phase shifter 1 and becomes an irradiation laser beam 20 inwhich the laser beam 15 having the uniform optical intensitydistribution or part thereof is phase-modulated. This irradiation laserbeam 20 irradiates the non-single-crystal semiconductor film to becrystallized. When a continuous crystallized region is formed as shownin FIG. 1D, in the junction portion of adjacent irradiation surfaceswhich are sequentially irradiated, the phase shifter 1 can form acontinuous triangular optical intensity distribution as shown in FIG.1C. In order to form a continuous triangular shape, the length of theopening of the light-shielding portion 4 in a periodic direction for theconcavity and convexity pattern has to be integral times of a cyclelength of the concavity and convexity pattern necessary for forming onecycle of the triangle wave.

Another embodiment which shields the peripheral light 11 described abovewill be explained below with reference to FIGS. 2A to 2D. The samereference numerals as in FIGS. 1A to 1D denote the same parts, and adetailed explanation thereof will be omitted.

As shown in FIG. 2A, a phase shifter 1 of this embodiment is obtained byforming a light-shielding portion 4 on the lower surface (exit surface),which is opposite to the surface shown in FIG. 1A, of alight-transmitting substrate 2, i.e, a synthetic quartz substrate. Asshown in FIG. 2B, the light-shielding portion 4 has a square throughhole which transmits the laser beam 15 or one portion thereof where theoptical intensity distribution is uniform. A incident laser beam 10 asshown in FIG. 2A enters the phase shifter 1 of this embodiment, andundergoes phase modulation. Of the phase-modulated incident laser beam10, the laser beam 15 having the uniform optical intensity distributionor one portion thereof is transmitted through the phase shifter 1, toform the irradiation region 12.

Similar to FIGS. 1A to 1D, in the junction portion of adjacentirradiation surfaces which are sequentially irradiated, the phaseshifter 1 has a continuous triangular optical intensity distribution asshown in FIG. 2C, and forms a continuous crystallized region as shown inFIG. 2D.

In both the embodiments shown in FIGS. 1A to 1D and 2A to 2D, thelight-shielding portion 4 needs to be accurately formed in a portioncorresponding to the concavity and convexity pattern of the phaseshifter. In addition, as shown in FIGS. 1C, 1D, 2C, and 2D, it ispossible to obtain optical characteristics in which the favorableoptical intensity distribution 21 continues and no mismatch point forms.When a large substrate is to be entirely crystallized, the phase shifter1 of each of these embodiments can easily form a crystallized region byoverlapping adjacent irradiation surfaces to be sequentially irradiated.The phase shifter 1 of each of these embodiments can increase theuniformity of crystal grains because the non-single-crystalsemiconductor film is irradiated with only the laser beam 10 transmittedthrough the irradiation region 12. In other words, the laser beam 10transmitted through the phase shifter 1 can eliminate or narrow thepolycrystal region. As shown in FIG. 1D or 2D, therefore, a uniformcrystallized region having a predetermined size can be continuouslyformed over a broad range. Furthermore, a single-crystal semiconductorfilm superior in crystal grain size, orientation, and electricalcharacteristics can be continuously formed without producing anymismatch point such that the optical intensity distribution continues asshown in FIG. 1C or 2C.

The light-shielding portion 4 must be so formed as to correspond to apredetermined concavity and convexity pattern. “Predetermined” meansthat, as shown in FIG. 1B or 2B, a triangular optical intensitydistribution continues over the boundary between adjacent irradiationsurfaces to be sequentially irradiated without producing any mismatchpoint. This means that the light-shielding portion 4 is formed as it isdesigned on the concavity and convexity pattern or on the surfaceopposite to the concavity and convexity pattern. More specifically, thelight-shielding portion 4 needs to have the length of the openings asmany as the integral times of the cycle length of the concavity andconvexity pattern necessary for forming one cycle of the continuoustriangular wave. The phase shifter 1 having the light-shielding portion4 thus formed can achieve the effect of obtaining the continuous opticalintensity distribution 21 in the adjacent irradiation surfaces to besequentially irradiated without producing any discontinuous point.

A practical example of the light-shielding member having the abovecharacteristics will be explained below with reference to FIG. 3. FIG. 3shows the light-shielding properties of the light-shielding portion 4which shields the laser beam 10 having the energy for crystallization,when the film thicknesses of three types of films, i.e., an aluminumfilm, chromium film, and Al—Si film were changed. The light-shieldingproperties were evaluated by the crystallinity (measured as the ratio ofthe area of a crystallized region to the overall area by a transmissionelectron microscope (TEM)) of the non-single-crystal semiconductor filmirradiated with the laser beam 10 transmitted through thelight-shielding portion 4. As shown in FIG. 3, the crystallinity wasshown to be zero when the light-shielding portion 4 was made of a 50-nmthick aluminum film, 30-nm thick chromium film, or 80-nm thick Al—Sifilm, and good light-shielding properties were obtained when they weremade by these thicknesses or more.

In the above embodiments, the light-shielding means obtained by formingthe thin film having light-shielding properties is described. However,the light-shielding properties need not be perfect, and it is onlynecessary to reduce light to such an extent that no crystallizationoccurs.

According to the above embodiments, when the light-shielding portion 4of the phase shifter 1 defines the irradiation region 12, although anirradiation region on the substrate to be crystallized is narrower thanthat when the light-shielding portion 4 defines no irradiation region,the energy uniformity in this irradiation region increases, so thecrystal grain uniformity in the irradiation region can be increased.Also, when the whole substrate to be crystallized is crystallized, it ispossible to irradiate the irradiation regions adjacent to each other,correctly aligned, on the non-single-crystal semiconductor film surfacewhenever the pulse laser beam is emitted, and the irradiation regionscan be formed as they are densely arranged. Since the optical intensitydistribution 21 corresponding to the irradiation regions becomes clear,it is easy to overlap the irradiation regions with each other to do theirradiation. Therefore, according to the present invention, theirradiation regions of high uniformity can be densely arranged andirradiated on the non-single-crystal semiconductor film, even in alarger substrate.

The uniforming effect of crystal grains obtained by the aboveembodiments can improve the fluctuation of characteristics of athin-film transistor (field-effect transistor), and sophisticate, interms of functions, a semiconductor device such as a semiconductorcircuit or integrated circuit formed by this thin-film transistor, andan electronic device. In addition, the above embodiments are effectivetechniques applicable to the technique of fabricating an electronicdevice such as a liquid crystal display or information processing deviceincorporating a thin-film transistor.

Although the crystallization apparatus is explained as an example of alaser annealing apparatus in the above embodiments, the presentinvention is not limited to this crystallization apparatus but alsoapplicable to an annealing apparatus for activation. Furthermore, thephase shifter 1 is not limited to the crystallization apparatus but alsoapplicable to an annealing apparatus for activation or an exposureapparatus.

In the above embodiments, the thin film having the light-shieldingproperties is formed on the light-transmitting substrate as an exampleof the light-shielding means. However, it is possible to use any meanswhich prevents, from being applied to the substrate to be processed, theperipheral light 11 of the incident laser beam 10 to the phase shifter1. For example, the incident light may also be irregularly reflected byforming a reflecting surface, such as a fine concavity and convexitysurface or roughened surface, on that portion of the light-transmittingsubstrate, which corresponds to the low-intensity portion describedabove.

Furthermore, the phase modulation surface is formed on the incidentsurface of the phase shifter 1 in the above embodiments, but the phasemodulation surface may also be formed on the exit surface.

An embodiment of a method of fabricating a phase shifter 1 will beexplained below with reference to FIGS. 4, 5A to 5D, and 6A to 6F. Thesame reference numerals as in FIGS. 1A to 1D, 2A to 2D, and 3 denote thesame parts, and a detailed explanation thereof will be omitted. Thisembodiment is a method of fabricating the phase shifter having alight-transmitting substrate 2 and a modulator which modulates the phaseof incident light entering the light-transmitting substrate 2, i.e., amethod by which a light-shielding means for shielding peripheral lightin an irradiation surface of incident light to a light-transmittingsubstrate 2 is formed in the incident optical path or exit optical pathof the light-transmitting substrate 2. “Peripheral portion in theirradiation surface” means the portion where the optical intensitydecreases, contrary to the region in the central portion of theirradiation surface where the optical intensity of the incident light isuniform, as explained in FIG. 1A. FIG. 4 shows flowchart (ST1) forexplaining the fabrication steps of the phase shifter 1. FIGS. 5A to 5Dare sectional views for explaining the fabrication method of the phaseshifter in order of steps.

First, ordinary phase shifter fabrication steps including a step (step 2in FIG. 4) of forming a phase modulator 3, e.g., a concavity andconvexity pattern which modulates the phase of incident light will beexplained. FIGS. 5A to 5D illustrate details of the concavity andconvexity pattern formation step. As shown in FIG. 5D, a phase shifterformed by the concavity and convexity pattern formation step comprises alight-transmitting substrate 2 and a light-transmitting film 38 formedon the light-transmitting substrate 2. The concavity and convexitypattern may be a duty modulation pattern or a line and space concavityand convexity pattern 36 made up of one or a plurality of parallelstripes.

The light-transmitting substrate 2 is made of glass, quartz, syntheticquartz and the like. The light-transmitting film 38 is made of amaterial equivalent to that of the light-transmitting substrate 2.

As a means for modulating the phase of the incident laser beam 10, apredetermined concavity and convexity pattern is formed on thelight-transmitting substrate 2. The steps of the concavity and convexitypattern 36 is so set as to have a phase difference of, e.g., 90° to thewavelength of an XeCl excimer laser beam or the like used in laserannealing.

A practical fabrication example of the phase shifter having theconcavity and convexity pattern 36 will be explained below. Initially,as shown in FIG. 5A, a light-transmitting substrate 2, e.g., a squaresynthetic quartz substrate of 5-inch side is prepared. On thelight-transmitting substrate 2, an amorphous silicon film 37 for forminga phase modulator 3 is formed by plasma CVD so as to cover one surfaceof the light-transmitting substrate 2. The thickness of the amorphoussilicon film 37 is set to, e.g., 75 nm by taking the above-mentionedphase difference into consideration.

After the film formation described above, photolithography of a phasemodulation pattern, e.g., a line & space pattern is performed, and theamorphous silicon film 37 is patterned on the light-transmittingsubstrate 2 by chemical dry etching (CDE) such that a portion of theamorphous silicon film 37 is left behind as shown in FIG. 5B.

After the patterning, the amorphous silicon film 37 is heated byannealing. In this annealing process, the amorphous silicon film 37 iswet-oxidized at 1,050° C. for 60 min to change into a silicon oxide film38 which is a light-transmitting film about 150 nm thick as shown inFIG. 5C. In this manner, a phase shifter as shown in FIG. 5D isfabricated. Although FIG. 5D shows the squared-off portions as theconvex portions of the silicon oxide film 38, they are not limited tothe above, but the squared-off portions may be given, e.g., by theconcave portions. In this case, the peripheral portion around thesquares is the silicon oxide film 38, although it is not illustrated.

The above method forms the concavity and convexity pattern having a goodstep shape by using the amorphous silicon film 37 having a highselectivity to the light-transmitting substrate 2, e.g., quartz. In thismethod, the amorphous silicon film 37 has a high etching selectivity toquartz as the light-transmitting substrate 2. Therefore, if the filmthickness distribution of the amorphous silicon film 37 falls within ±5%on the light-transmitting substrate 2, the phase difference distributioncan also fall within ±5% accordingly.

The method of forming the concavity and convexity pattern is not limitedto the above method. It is also possible to form the concavity andconvexity pattern by directly etching the light-transmitting substrate2. This method requires highly reproducible etching characteristicswhich stop etching when a desired step shape is formed, and an etchingmethod having etching rate uniformity over the entire surface.

A method of fabricating a phase shifter 1 with a light-shielding memberwill be explained below with reference to FIGS. 4 and 6A to 6F. Thelight-transmitting substrate 2 of the phase shifter explained withreference to FIGS. 5A to 5D is a material, e.g., a synthetic quartzsubstrate having transparency to the incident laser beam 10. Theconcavity and convexity pattern which shifts the phase of the incidentlaser beam 10 is formed on the surface of the substrate made ofsynthetic quartz (step 2 in FIG. 4). The phase shifter is cleaned by RCAin order to remove contamination and the like (step 3 in FIG. 4). TheRCA cleaning is a cleaning method performed by consecutive processing ofSC-1 processing (solution mixture processing using NH₃/H₂O₂/H₂O at 85°C.) and SC-2 processing (solution mixture processing using HCl/H₂O₂/H₂Oat 85° C.). Although the RCA cleaning is a cleaning method effective toremove contaminants (e.g., particles, fats and fatty oils, and metalcontaminants) on the surface of an object to be cleaned, the temperatureof the processing solution is not limited to 85° C. Also, thepre-processing is not limited to the RCA cleaning and need only be acleaning method capable of cleaning an object to be cleaned.

FIGS. 6A to 6F are sectional views for explaining, in order of steps,the method of fabricating a phase shifter 1 with a light-shieldingmember from the phase shifter fabricated by the above method. FIG. 6A isa sectional view of the phase shifter having undergone the RCA cleaningafter being fabricated by the method shown in FIGS. 5A to 5D. FIG. 6B isa sectional view showing the state in which a light-shielding means isformed on the concavity and convexity pattern of the phase shifter. Thislight-shielding means is obtained by forming, i.e., a metal thin film onthe phase shifter (step 4 in FIG. 4). This film formation method usessputtering, vapor deposition, CVD, or the like to form, e.g., analuminum film, aluminum alloy film, chromium film, or another metal filmas a film having a high etching selectivity to the light-transmittingsubstrate 2 made of synthetic quartz and also having properties ofshielding the incident laser beam 10.

“Light shielding” by the light-shielding means does not mean 1000 lightshielding, i.e., perfect shielding of incident light, and may also belight shielding by which incident light is selectively reduced inaccordance with the characteristics shown in FIG. 3, therebytransmitting a certain predetermined amount of the incident light. Thatis, if a substrate to be crystallized, e.g., an amorphous siliconsubstrate is neither melted nor crystallized even when irradiated withthe laser beam 10 which is not completely shielded but is obtained byreducing the optical intensity of the incident light, no insufficientcrystallization (to be described later) occurs, so the same effect aswhen the laser beam is completely shielded can be obtained. Accordingly,“light shielding” herein mentioned does not mean perfect light shieldingbut includes light reduction to such an extent that no crystallizationoccurs. An example in which an Al—Si film is formed on the substrate 2will be explained.

As a step of forming the Al—Si film, a film formation step using, e.g.,sputtering will be described below. First, a light-transmittingsubstrate 2, i.e., a synthetic quartz substrate as a substrate to beprocessed is loaded into and set in a DC magnetron sputter in which anAl—Si plate is set as a target, a gas such as argon gas is set at a flowrate of 100 sccm, and the pressure is set at 3 mtorr. A 300-nm thickfilm is formed on the entire surface of the substrate 2, that is, thesynthetic quartz substrate by DC magnetron sputtering as shown in FIG.6B.

As shown in FIG. 6C, a resist coating step (step 5 in FIG. 4) isexecuted after the Al—Si film as a light-shielding portion 4 is formed.As shown in the sectional view of FIG. 6C, the Al—Si film is coated witha resist film 39 by spin coating or the like. Exposure step 6 isexecuted to form a desired light-shielding region on the Al—Si film. Inexposure step 6, the synthetic quartz substrate is set by positioningin, e.g., an exposure apparatus. An exposure mask is a light shieldingmember formation mask which has a light-shielding portion for shieldingincident light in a predetermined peripheral portion of the concavityand convexity pattern and in the peripheral portion of the syntheticquartz substrate, and forms a through hole portion in the centralportion except for the peripheral portion. That is, in exposure step 6,the resist film 39 is exposed while the through hole portion is aligned.

In the exposure step (step 6 in FIG. 4) and a development step (step 7in FIG. 4), an unnecessary portion of the resist film 39 in the throughhole portion is removed to form a pattern of the resist film 39 as shownin FIG. 6D. As a consequence, the Al—Si film is exposed to the throughhole portion from which the resist film is removed.

An etching step (step 8 in FIG. 4) of removing the exposed Al—Si film,e.g., a reactive plasma etching or wet etching step is performed usingthe pattern of the resist film 39 as a mask. For example, a wet etchingsolution having a high selectivity to the phase shifter shown in FIG. 6Ais used. This makes it possible to etch away only the exposed portion ofthe Al—Si film without inflicting any damage on the phase-shift,concavity and convexity pattern 36 formed on the surface of the phaseshifter, thereby forming a light-shielding portion 4 (FIG. 6E).

The Al—Si film is wet-etched by using an aqueous iodine/potassium iodidesolution. This solution strongly etches a chromium film, but hardlyetches synthetic quartz. Accordingly, the Al—Si film is etched with ahigh selectivity to the synthetic quartz. The wet etching solution isnot limited to the aqueous iodine/potassium iodide solution, and needonly be an etching solution by which the Al—Si film has selectivity tothe synthetic quartz and phase-shift, concavity and convexity pattern.

Also, when a metal film other than the Al—Si film, a semiconductor film,an insulator film, or the like is to be used as a light-shieldingmember, a favorable light-shielding member can be formed by using anetching solution having selectivity to the substrate made of syntheticquartz and phase-shift, concavity and convexity pattern 36.

The foregoing is wet etching. A method of removing the Al—Si film by dryetching such as reactive plasma etching will be explained below. Thephase shifter having the Al—Si film with a resist pattern is loaded intoa parallel plate RF reactive ion etching apparatus. A gas mixture of 60sccm of dichloromethane gas and 40 sccm of oxygen is supplied as anetching gas made of a chlorine-based gas, and reactive ion etching isperformed by setting the pressure at, e.g., 10 mtorr. By this etchingprocess, the phase shifter 1 is formed. The plasma etching gas for themetal film is not limited to the etching gas made of a chlorine-basedgas, and plasma etching using another etching gas may also be performed.The light-shielding member having undergone the wet etching or dryetching descried above has an annular shape having a light-transmittingportion in the central portion.

After that, resist removing step 9 is executed. As shown in FIG. 6F, theresist film 39 is removed, and cleaning is performed (step 9 in FIG. 4).In this manner, the light-shielding-member-integrated phase shifter 1having the light-shielding portion 4 can be fabricated.

An embodiment of a crystallization apparatus using the phase shifter 1will be explained below with reference to FIGS. 7, 8A, and 8B. The samereference numerals as in FIGS. 1A to 6F denote the same parts. Thecrystallization apparatus of this embodiment is an apparatus whichirradiates a substrate 45 to be crystallized on a suscepter with a laserbeam from a laser source via a homogenizing optical system and phaseshifter, thereby crystallizing the irradiated surface. The phase shifterhas a phase modulator formed on a light-transmitting substrate, and alight-shielding portion formed in the incident optical path of thelight-transmitting substrate. The light-shielding portion shieldsperipheral light in the irradiation surface of incident light.

A crystallization apparatus 41 includes an illuminating system 42, aphase modulation device such as a phase shifter 1 formed on the opticalaxis of the illuminating system 42, an image formation optical lenssystem 44, and a suscepter 46 for supporting the substrate 45 to becrystallized.

The illuminating system 42 is an optical system shown in FIG. 8A, andincludes a light source 51 and homogenizing optical system 52. The lightsource 51 includes an XeCl excimer laser source which emits a pulselaser beam having a wavelength of, e.g., 308 nm. Note that other optimumexamples of the light source 51 are excimer lasers such as a KrF excimerlaser which emits a pulse laser beam having a wavelength of 248 nm, andan ArF excimer laser which emits a pulse beam having a wavelength of 193nm. The light source 51 may also be a YAG laser source. The light source51 is also possible to use another appropriate light source whichoutputs energy for melting a non-single-crystal semiconductor film 45C,e.g., an amorphous silicon film formed on the substrate 45 to becrystallized. The homogenizing optical system 52 is formed on theoptical axis of the laser beam emitted from the light source 51.

In the homogenizing optical system 52, a beam expander 52A, firstfly-eye lens 52B, first condenser optical system 52C, second fly-eyelens 52D, and second condenser optical system 52E are arranged on theoptical axis of the laser beam from the light source 51. Thehomogenizing optical system 52 homogenizes the optical intensity in thesection of the laser beam emitted from the light source 51.

That is, in the illuminating system 42, the incident laser beam from thelight source 51 is shaped via the beam expander 52A, and enters thefirst fly-eye lens 52B. A plurality of light sources are formed on therear focal surface of the first fly-eye lens 52B, and a bundle of raysfrom these light sources illuminates, by superposition, the incidentsurface of the second fly-eye lens 52D via the first condenser opticalsystem 52C. As a consequence, a number of light sources larger in numberthan those formed on the rear focal surface of the first fly-eye lens 52b are formed on the rear focal surface of the second fly-eye lens 52D. Abundle of rays from these light sources formed on the rear focal surfaceof the second fly-eye lens 52D enters the phase shifter 1 via the secondcondenser optical system 52E, and illuminates the phase shifter 1 bysuperposition.

That is, the first fly-eye lens 52B and first condenser optical system52C of the homogenizing optical system 52 form a first homogenizer, andthe second fly-eye lens 52D and second condenser optical system 52E ofthe homogenizing optical system 52 form a second homogenizer, therebyhomogenizing the optical intensity in individual in-plane positions onthe phase shifter 1. In this way, the illuminating system 42 forms alaser beam 10 having a substantially uniform optical intensitydistribution, and the laser beam 10 irradiates the phase shifter 1 asshown in FIG. 1A.

In this case, the problem is that the homogenizing optical system 52homogenizes the optical intensity of the laser beam from the lightsource 51, but the optical intensity is not completely homogenized asshown in FIG. 1A. FIG. 8B shows a laser beam intensity distribution 13in an irradiation plane b in which the phase shifter 1 is irradiated. Inthe laser beam intensity distribution 13 shown in FIG. 8B, the opticalintensity of the laser beam 10 in the peripheral light 11 is lower thanthat in a central portion 15 in which the optical intensity is uniform.This decrease in optical intensity in the peripheral light 11 of thelaser beam intensity distribution 13 changes the grain size andorientation as described previously, and worsens the electricalcharacteristics when a transistor is formed.

This embodiment is characterized in that the peripheral light 11 whichworsens the electrical characteristics as described above is shieldedand prevented from entering the image formation optical lens system 44,thereby improving the uniformity of the crystal grains formed on thecrystallized region, hence to improve the uniformity of the electricalcharacteristics of a transistor formed in the crystallized region. Toshield the peripheral light 11 and prevents it from entering the imageformation optical lens system 44, a light-shielding means is formed inthe optical path from the exit portion of the homogenizing opticalsystem 52 to the incident surface of the image formation optical lenssystem 44. An optimum example is to form a light-shielding member on atleast one of the incident surface and exit surface of the phase shifter1.

The phase modulation device, e.g., the phase shifter 1 is an opticaldevice which modulates the phase of the exit light from the homogenizingoptical system 52, and outputs a laser beam having a minimum opticalintensity distribution with an inverse peak pattern. In theinverse-peak-pattern optical intensity distribution, the abscissaindicates the location (the position in the surface to be irradiated),and the ordinate indicates the optical intensity (energy). An example ofthe optical system for obtaining this inverse-peak-pattern opticalintensity distribution is a concavity and convexity pattern formed onthe light-transmitting substrate 2, e.g., quartz glass. Examples of thispattern are a line-and-space pattern and area modulation pattern, e.g.,duty modulation pattern.

The phase shifter 1 of this embodiment is an optical element in whichsteps are repetitively periodically formed. The width of the phase shiftpattern is, e.g., 25 μm. The phase difference need not be 90°, i.e.,need only be a phase difference capable of increasing and decreasing theintensity of a laser beam.

The irradiation light 20 having the phase modulated by the phase shifter1 strikes the substrate 45 to be crystallized via the image formationoptical lens system 44. In the image formation optical lens system 44,the pattern surface of the phase shifter 1 and the substrate 45 to becrystallized are optically conjugated. In other words, the height of thesuscepter 46 is corrected such that the substrate 45 to be crystallizedis set on a plane (the image plane of the image formation optical lenssystem 44) which is optically conjugated to the pattern surface of thephase shifter 1. The image formation optical lens system 44 has anaperture stop 44C between positive lenses 44A and positive lenses 44B.The image formation optical lens system 44 is an optical lens whichforms an image of the phase shifter 1 on the substrate 45 to becrystallized, without changing the magnification of the image or byreducing the image to, e.g., ⅕.

The aperture stop 44C has a plurality of aperture stops different insize of an aperture (light-transmitting portion) so as not to use lightin the peripheral portion where the characteristics of the positivelenses 44A and positive lenses 44B deteriorate.

Also, the substrate 45 to be crystallized has a stacked structure asshown in FIG. 7. On a glass substrate 45A which is, e.g., plate glassfor a liquid crystal display, a silicon oxide layer is formed as anunderlying insulating layer 45B by chemical vapor deposition (CVD) orsputtering. On the underlying insulating layer 45B, a non-single-crystalsemiconductor film 45C such as an amorphous silicon film is formed as alayer to be crystallized for forming at thin-film transistor. On thenon-single-crystal semiconductor film 45C, a silicon oxide layer 45Dhaving a heat storage effect is formed as a cap film. The underlyinginsulating layer 45B is, e.g., a 200- to 1,000-nm thick SiO₂ film. Theunderlying insulating layer 45B prevents direct contact between thenon-single-crystal semiconductor film 45C, e.g., an amorphous siliconand the glass substrate 45A, thereby preventing foreign matter such asNa precipitated from the glass substrate 45A from mixing into theamorphous silicon film 45C. The underlying insulating layer 45B alsoprevents the melting temperature in the step of crystallizing theamorphous silicon film 45C from being directly conducted to the glasssubstrate 45A, thereby contributing to crystallization of large grainsby the effect of storing the melting temperature.

The amorphous silicon film 45C is a film which is crystallized whenirradiated with light, and the film thickness is, e.g., 30 to 250 nm.The cap film 45D stores the heat generated when the amorphous siliconfilm 45C is melted in the crystallization step, and prevents theirradiated region of the amorphous silicon film 45C from rapidly coolingwhen the laser beam is shielded. This heat storage function contributesto the formation of a large-grain-size crystallized region. The cap film45D is an insulating film, e.g., a silicon oxide film (SiO₂), and thefilm thickness is 100 to 400 nm, e.g., 200 nm.

After the cap film is formed, annealing is performed at 500° C. for 2hrs in order to decrease the hydrogen concentration in the amorphoussilicon film.

The crystallization process will be explained below with reference toFIGS. 7, 8A, and 8B. The pulse laser beam emitted from the light source51, e.g., a laser source enters the homogenizing optical system 52, andthe optical intensity is homogenized within the beam diameter of thelaser beam.

The laser beam is an XeCl excimer laser beam having a wavelength of 308nm, and the pulse continuation time of one shot is 30 nsec. When thephase shifter 1 is irradiated with the pulse laser beam under the aboveconditions, a periodically changing optical intensity distribution of aninverse peak pattern is generated, for example.

Of the laser beam entering the phase shifter 1, i.e., the exit beam fromthe homogenizing optical system 52, the peripheral light 11 as shown inFIG. 8B exists, so a means for shielding the peripheral light 11 isformed in, e.g., the phase shifter 1.

This optical intensity distribution having the inverse peak patterndesirably outputs laser beam intensity which melts the amorphous siliconlayer 45C from the minimum optical intensity to the maximum opticalintensity. The irradiation beam having passed through the phase shifter1 is irradiated on the amorphous silicon film 45C of the substrate 45 tobe crystallized by the image formation optical system 44.

The laser beam having irradiated the substrate 45 to be crystallized ismostly transmitted through the silicon oxide film 45D as a cap film, andabsorbed by the amorphous silicon film 45C. This heats and melts theirradiated region of the amorphous silicon film 45C. The melting heat isstored in the silicon oxide films 45B and 45D.

When the irradiation with the pulse laser beam is completed, theirradiated region tends to cool at high speed, but the cooling rate ismade extremely low by the heat stored in the silicon oxide films of thecap film 45D and underlying insulating layer 45B. In this case, theirradiated region cools such that a low-optical-intensity portion coolsand solidifies in accordance with the inverse-peak-pattern opticalintensity distribution generated by the phase shifter 1, and the crystalsequentially grows as the solidification position sequentially moves inthe lateral direction toward a high-optical-intensity portion.

In other words, the solidification position in the melted region in theirradiated region gradually sequentially moves from the low-temperatureside to the high-temperature side. That is, the crystal grows in thelateral direction from the crystal growth start position to the crystalgrowth end position. In this manner, the crystallization step by thelaser beam of one pulse is completed. The crystallized region thus grownhas an enough size to form one or a plurality of thin-film transistors.

The crystallization apparatus 41 automatically irradiates a region to becrystallized of the next amorphous silicon film 45C with the pulse laserbeam in accordance with a prestored program, thereby forming acrystallized region. The next crystallization position can be selectedby moving the substrate 45 to be crystallized and light source 51relative to each other, e.g., moving the sample suscepter 46.

When the region to be crystallized is selected and orientation iscompleted, the next pulse laser beam is emitted. A broad range of thesubstrate 45 to be crystallized can be crystallized by thus repeatingthe shot of the laser beam. In this way, the crystallization step iscompleted.

In the above embodiment, the light-shielding portion 4 is directlyformed on the incident surface or exit surface of the phase shifter 1 inorder to shield the peripheral light 11. However, the light-shieldingmeans may shield the peripheral light 11 in any position of the opticalpath between the exit surface of the homogenizer 52 and the incidentsurface of the image formation optical system 44. The light-shieldingmeans may also be formed in a plurality of portions, instead of oneportion, of the optical path between the incident surface and exitsurface of the phase shifter 1, i.e., between the exit surface of thehomogenizer 52 and the incident surface of the image formation opticalsystem 44.

For example, as shown in FIG. 9A, the light-shielding means may also beformed in the laser beam 10 which enters the optical path, e.g., theincident optical path of the phase shifter 1. This embodiment is anexample in which at least one light-shielding member 25 is formed as alight-shielding means between the exit surface of the homogenizingoptical system, e.g., the homogenizer 52 and the incident surface of theimage formation optical lens system 44. The light-shielding member 25 isan annular light-shielding member having, e.g., a square through hole27. The same reference numerals as in FIGS. 1A to 8B denote the sameparts, and a repetitive explanation thereof will be omitted. FIG. 9Ashows the state in which the light-shielding member 25 shields theperipheral light 11 having a low optical intensity of the pulse laserbeam 10 striking from the homogenizer 52, and the laser beam 10transmitted through the through hole 27 enters the phase shifter 1. FIG.9B is a plan view showing an irradiation region 12 defined by the phaseshifter 1.

In this case, as shown in FIGS. 9C and 9D, no irradiated region showinginsufficient crystallization is formed in the substrate 45 to becrystallized, and only good adjacent crystallized regions 22 arecontinuously formed or overlapped.

The above embodiments have described a case in which the opticalintensity distribution 21 is the inverse peak pattern. This time, theembodiments in which the optical intensity distribution 21 is a normalpeak pattern will be explained with reference to FIGS. 10A to 10D. Thesame reference numerals as in FIGS. 1A to 1D denote the same parts, anda detailed explanation thereof will be omitted.

The normal peak pattern means the triangle waves arranged such that theintensity of the irradiation laser beam 20 becomes the minimum in theend portions of the optical intensity distribution 21, as shown in FIGS.10A and 100. In FIG. 100, the optical intensity of the portions adjacentto the optical intensity distribution 21 in the normal peak patternbecomes the minimum. Crystallization experiments were performed on thesetwo optical intensity distributions to evaluate the uniformity of theircrystal grains, and it was found that the optical intensity distribution21 in the normal peak pattern is superior to that in the inverse peakpattern.

This reason will be explained using FIGS. 11A and 11B. FIG. 11A showsthe optical intensity distribution (the upper portion of FIG. 11A) perone shot when the optical intensity distribution 21 is the inverse peakpattern and a schematic view (the lower portion of FIG. 11A) indicatingthe crystallization growth by SEM in the portion corresponding to theoptical intensity distribution. This schematic view shows the crystalgrains 32 and the direction 30 of the crystallization growth. Around thecentral portion of the optical intensity distribution 21, every loweroptical intensity portion decreases in temperature and solidifies, basedon the optical intensity distribution of the inverse peak patterngenerated by the phase shifter 1, and solidification portionsequentially moves toward the higher optical intensity portion where atemperature is high, in the horizontal direction, hence to form thecrystal grains 32 densely.

The end portions 26, however, are shielded by the end portions of theopening of the light-shielding member, although they have the maximumoptical intensity, and therefore, the optical intensity thereof rapidlydecreases. Accordingly, it is observed that the crystal grains 34 whichrespectively grow around the end portions 26 are a little smaller thanthe crystal grains 32.

Even though there exist these crystal grains 34, the crystallizationgrowth is densely achieved on the whole surface. This is because theperipheral light 11 which worsens the crystallization or does not growthe crystal is shielded and the irradiation step is densely performed onthe adjacent regions in a square shape.

The crystallization growth of the normal peak pattern is shown in FIG.11B. FIG. 11B is a view showing the optical intensity distribution (theupper portion of FIG. 11B) per one shot when the optical intensitydistribution 21 is the normal peak pattern and a schematic view (thelower portion of FIG. 11B) of the crystallization growth by SEM in theportion corresponding to the optical intensity distribution. No crystalgrain 34 is found in the end portion 26 but the same crystal grain 32growing in the central portion is observed also in the end portion 26.This is because the optical intensity in the optical intensitydistribution is the minimum in the end portion, without a rapid fall ofthe optical intensity, and the same crystallization growth mechanismworks also in the end portion 26 as that in the central portion.

Therefore, the uniformity of the crystal grains in the optical intensitydistribution of the normal peak pattern is superior to that in theoptical intensity distribution of the inverse peak pattern.

In the above, the case where the accuracy of the opening of thelight-shielding member is correct has been described. A small deviationin the accuracy does not matter practically.

The light-shielding member explained in the above embodiments is notlimited to a thin film formed on the incident surface or exit surface ofthe phase shifter 1, and may also be a light-shielding member which isheld to have a predetermined spacing with the phase shifter 1 as a phasemodulation device, by inserting a spacer 28 or the like or by using atool for holding the predetermined spacing.

Furthermore, in the above embodiments, not only crystallized regionshaving a uniform size are formed, but also no non-crystallized regionsare little generated around the crystallized regions. Additionally,thin-film transistors having uniform characteristics can be formed overa broad range in the thus crystallized region. Consequently, when animaging element or a display device such as an active matrix type liquidcrystal display device is formed, it is possible to fabricate hundredsof thousands of thin-film transistors with uniform characteristics, anddisplay uniform images.

Additional advantages and modifications will readily occur to thoseskilled in the art. Therefore, the invention in its broader aspects isnot limited to the specific details and representative embodiments shownand described herein. Accordingly, various modifications may be madewithout departing from the spirit or scope of the general inventiveconcept as defined by the appended claims and their equivalents.

1. A crystallization apparatus in which a laser beam from a laser sourceirradiates a substrate to be processed on a suscepter via a homogenizingoptical system, a phase modulation device, and an image formationoptical lens system, thereby crystallizing an irradiated surface,comprising: light-shielding means which is provided on the phasemodulation device between an exit surface of the homogenizing opticalsystem and an incident surface of the image formation optical lenssystem, and shields peripheral light of exit light from the homogenizingoptical system.
 2. An apparatus according to claim 1, wherein thelight-shielding means is an annular light-shielding member.